Directly High-Voltage Measuring System Based on Pockels Effect
Directly High-Voltage Measuring System Based on Pockels Effect
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DOI：
10.1109/tpwrd.2013.2250315
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发表时间：
2013-07-01
影响因子：
4.4
通讯作者：
Hidaka, Kunihiko
中科院分区：
文献类型：
--
作者：
Kumada, Akiko;Hidaka, Kunihiko
为了测量直流至GHz范围内+/- 450 kV的高压，研制了一种采用纵向调制排列的Pockels晶体的新型光学高压测量系统。传统波克尔斯传感器的最大可测电压受到半波长电压V-pi的限制。在新系统中，引入了双波长双激光系统，将每个光的可测量电压扩展到V-pi的最小公倍数。给出了系统对直流、交流、雷电冲击和阶跃电压的测量结果，并与预测值进行了比较。
To measure high voltage up to +/- 450 kV in the dc to GHz range, a new optical high-voltage measuring system using a Pockels crystal in a longitudinal modulation arrangement is developed. The maximum measurable voltage for conventional Pockels sensors has been limited by the half-wavelength voltage V-pi. In the new system, a two-wavelength dual laser system is introduced to expand measurable voltage up to the least common multiple of V-pi for each light. The measured results for dc, ac, lightning impulse, and step voltages by the system are presented and compared with the predicted values.