Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography
Inhomogeneity of PAGs in resist film studied by molecular-dynamics simulations for EUV lithography
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通过 EUV 光刻的分子动力学模拟研究光刻胶膜中 PAG 的不均匀性
DOI：
10.1117/12.2045872
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
T. Itani
中科院分区：
文献类型：
--
作者：
M. Toriumi;T. Itani
同时要求极紫外光抗蚀剂材料提高分辨率、线边缘粗糙度(LER)和灵敏度(RLS)。在抗蚀剂薄膜中，纳米区域的不均匀结构可能直接影响分辨率和LER，也可能间接影响感光度。用分子动力学模拟方法研究了极紫外光刻用混合抗蚀剂中PAG的不均匀性。杂化胶膜表现出PAG阳离子和阴离子的不均匀位置和运动。抗蚀剂基质中的自由体积影响PAG的运动。PAG阳离子的分子结构，如大量的苯基团，可以定位位置，减少阳离子的运动。离子相互作用和孤对相互作用等化学性质也是决定PAG不均一性的重要因素。氟的相互作用使PAG阴离子能够主动运动。
EUV resist materials are requested simultaneously to improve the resolution, line-edge roughness (LER), and sensitivity (RLS). In a resist film inhomogeneous structures in nanometer region may have large effects on directly the resolution and LER and indirectly on sensitivity. Inhomogeneity of PAGs in a hybrid resist for EUV lithography was investigated using molecular dynamics simulations. The hybrid resist film showed the inhomogeneous positions and motions of PAG cations and anions. Free volumes in resist matrix influence the motions of PAGs. Molecular structure such as bulky phenyl groups of a PAG cation localize the positions and reduce the motion of a cation. Chemical properties such as ionic interactions and lone-pair interaction also play an important role to determine the inhomogeneity of PAGs. Fluorine interaction enables active motions of PAG anions.