X-ray CCD with charge-injection structure
X-ray CCD with charge-injection structure
复制标题
电荷注入结构的X射线CCD
DOI：
10.1117/12.553059
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
M. Freytsis
中科院分区：
文献类型：
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作者：
G. Prigozhin;B. Burke;M. Bautz;S. Kissel;B. LaMarr;M. Freytsis
对用于ASTRO-E2航天器机载X射线检测的帧传输CCD进行了修改，以包括输入串行寄存器和电荷注入结构，该结构允许将非常均匀的电荷注入到设备的成像部分。一个变化的填充和溢出的方法进行注入电荷到CCD。描述了结构的操作，并给出了测量结果。非常小的电荷包（几十个电子）可以重复注入，噪声低至5个电子rms。注入的电荷量可以由外部电压以非常高的精度控制。我们应用这种技术来研究质子辐照CCD的各种特性，如电荷损失的列到列的不均匀性和电荷损失的幅度依赖性。后者与电荷存储位点中的电荷-体积关系有关，并且我们第一次在非常低的信号电平下准确地测量这种关系。
A frame transfer CCD intended for X-ray detection on-board ASTRO-E2 spacecraft was modified to include an input serial register and a charge injection structure which allows a very uniform injection of charge into the imaging section of the device. A variation of the fill-and-spill method was implemented to inject charge into the CCD. The operation of the structure is described, and results of the measurements are presented. Very small charge packets (a few tens of electrons) can be reproducibly injected with noise as low as 5 electrons rms. The amount of injected charge can be controlled by the external voltage with very high accuracy. We have applied this technique to study various characteristics of the proton irradiated CCD, such as the column-to-column nonuniformity of charge losses and the amplitude dependence of the charge loss. The latter is related to the charge-volume relation in the charge storage site and for the first time we accurately measure this relationship at very low signal levels.