Resonantly enhanced, frequency doubling of an 820 nm GaAlAs diode laser in a potassium lithium niobate crystal
Resonantly enhanced, frequency doubling of an 820 nm GaAlAs diode laser in a potassium lithium niobate crystal
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DOI：
10.1063/1.108831
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发表时间：
1993-01
影响因子：
4
通讯作者：
J. Reid
中科院分区：
文献类型：
--
作者：
J. Reid
使用铌酸钾锂晶体将820 nm GaAlAs单模二极管激光器的共振增强发射增加一倍。在无源谐振器增强因子为73和入射近红外功率为11.5 mW的情况下，在准连续操作中产生0.36 mW的二次谐波。晶体的光学质量进行了描述，并与KNbO3的。
A potassium lithium niobate crystal was used to double the resonantly enhanced emission of an 820 nm GaAlAs, single‐mode diode laser. With a passive resonator enhancement factor of 73 and 11.5 mW of incident near‐infrared power, 0.36 mW of second harmonic were produced in quasi‐cw operation. The optical quality of the crystal is described and compared with that of KNbO3.