On-Chip Photonic Memory Elements Employing Phase-Change Materials
On-Chip Photonic Memory Elements Employing Phase-Change Materials
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DOI：
10.1002/adma.201304476
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发表时间：
2014-03-01
影响因子：
29.4
通讯作者：
Pernice, Wolfram H. P.
中科院分区：
文献类型：
--
作者：
Rios, Carlos;Hosseini, Peiman;Pernice, Wolfram H. P.
相变材料集成到纳米光子电路中提供了一种灵活的方式来实现可调谐光学组件。依靠非晶态和晶态之间巨大的折射率对比，这种材料是片上光子存储器的有希望的候选者。非易失性存储器操作采用微谐振器阵列被证明是走向全光子芯片级信息处理的一条路线。
Phase-change materials integrated into nanophotonic circuits provide a flexible way to realize tunable optical components. Relying on the enormous refractive-index contrast between the amorphous and crystalline states, such materials are promising candidates for on-chip photonic memories. Nonvolatile memory operation employing arrays of microring resonators is demonstrated as a route toward all-photonic chipscale information processing.