Fractional Diffusion in Silicon
Fractional Diffusion in Silicon
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DOI：
10.1002/adma201302559
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发表时间：
2013-10
影响因子：
29.4
通讯作者：
E. S. Zijlstra;A. Kalitsov;T. Zier;Martin E. Garcia
中科院分区：
文献类型：
--
作者：
E. S. Zijlstra;A. Kalitsov;T. Zier;Martin E. Garcia
通过大规模从头算分子动力学模拟研究了导致超快激光诱导硅熔化的微观过程。在变成液体之前，原子被证明是部分扩散的，这是迄今为止在由大分子组成的拥挤流体中观察到的一种特性。在这里，发现它发生在元素半导体中。
Microscopic processes leading to ultrafast laser-induced melting of silicon are investigated by large-scale ab initio molecular dynamics simulations. Before becoming a liquid, the atoms are shown to be fractionally diffusive, which is a property that has so far been observed in crowded fluids consisting of large molecules. Here, it is found to occur in an elemental semiconductor.