Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film
Structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin film
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DOI：
10.1063/1.2337392
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发表时间：
2006-09
影响因子：
3.2
通讯作者：
M. Takashiri;T. Borca-Tasciuc;A. Jacquot;K. Miyazaki;Gang Chen
中科院分区：
文献类型：
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作者：
M. Takashiri;T. Borca-Tasciuc;A. Jacquot;K. Miyazaki;Gang Chen
研究了掺硼纳米晶Si_（0.8）Ge_（0.2）薄膜的结构和热电性能，以期在微型热电器件中获得潜在的应用。采用低压化学气相沉积法在Si（100）衬底上沉积了Si 3 N4、SiO2、Si 3 N4多层膜，并在其上生长了纳米晶Si_（0.8）Ge_（0.2）薄膜。通过离子注入对Si_（0.8）Ge_（0.2）薄膜进行硼掺杂。通过原子力显微镜、X射线衍射和透射电子显微镜研究了薄膜的结构。结果表明，薄膜具有直径约100 nm的柱状晶粒，晶粒沿薄膜厚度方向沿着取向。在80-300 K和130- 300 K温度范围内测量了电导率和塞贝克系数。在室温下通过3ω方法测量热导率。与硅锗比和掺杂浓度几乎相同的体硅锗和微晶薄膜合金相比，Si_（0.8）Ge_（0.2）纳米微晶薄膜具有更好的热稳定性。
The structure and thermoelectric properties of boron doped nanocrystalline Si0.8Ge0.2 thin films are investigated for potential application in microthermoelectric devices. Nanocrystalline Si0.8Ge0.2 thin films are grown by low-pressure chemical vapor deposition on a sandwich of Si3N4∕SiO2∕Si3N4 films deposited on a Si (100) substrate. The Si0.8Ge0.2 film is doped with boron by ion implantation. The structure of the thin film is studied by means of atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It is found that the film has column-shaped crystal grains ∼100nm in diameter oriented along the thickness of the film. The electrical conductivity and Seebeck coefficient are measured in the temperature range between 80–300 and 130–300K, respectively. The thermal conductivity is measured at room temperature by a 3ω method. As compared with bulk silicon-germanium and microcrystalline film alloys of nearly the same Si∕Ge ratio and doping concentrations, the Si0.8Ge0.2 nanocrystallin...