Advanced physical modeling of SiOx resistive random access memories
Advanced physical modeling of SiOx resistive random access memories
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DOI：
10.1109/sispad.2016.7605169
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
T. Sadi;Liping Wang;D. Gao;A. Mehonic;L. Montesi;M. Buckwell;A. Kenyon;A. Shluger;A. Asenov
中科院分区：
文献类型：
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作者：
T. Sadi;Liping Wang;D. Gao;A. Mehonic;L. Montesi;M. Buckwell;A. Kenyon;A. Shluger;A. Asenov
我们应用一个三维（3D）物理模拟器，耦合自洽随机动力学蒙特卡罗描述的离子和电子输运，研究开关在富硅二氧化硅（SiOx）氧化还原为基础的电阻随机存取存储器（RRAM）设备。我们解释了电阻开关的SiOx层的固有性质，并展示了自热效应和初始空位分布对开关的影响。我们还强调了使用3D物理建模来正确预测开关行为的必要性。该模拟框架对于探索SiOx RRAM和RRAM器件的鲜为人知的物理特性非常有用。这证明在性能、可变性和可靠性方面对于实现有效的器件和电路设计是有用的。
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects and the initial vacancy distributions on switching. We also highlight the necessity of using 3D physical modelling to predict correctly the switching behavior. The simulation framework is useful for exploring the little-known physics of SiOx RRAMs and RRAM devices in general. This proves useful in achieving efficient device and circuit designs, in terms of performance, variability and reliability.