A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
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一种新型功能性谐振隧道热电子晶体管 (RHET)
DOI：
10.1143/jjap.24.l853
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发表时间：
1985
影响因子：
1.5
通讯作者：
H. Nishi
中科院分区：
文献类型：
--
作者：
N. Yokoyama;K. Imamura;S. Muto;S. Hiyamizu;H. Nishi
摘要-一种新的功能，共振隧穿热电子晶体管（RHET），其中电子被注入从发射极到基地的共振隧穿通过量子阱，并近弹道转移到集电极。该器件的主要特点是峰值集电极电流特性相对于基极-发射极电压。这使我们能够仅使用一个晶体管来构建倍频器或异或门。
Abstract-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.