10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing
复制标题
通过闪光灯退火形成 10–15 nm 超浅结
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
T. Kusuda
中科院分区：
文献类型：
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作者：
T. Ito;T. Iinuma;A. Murakoshi;H. Akutsu;K. Suguro;T. Arikado;K. Okumura;M. Yoshioka;Tatsushi Owada;Y. Imaoka;H. Murayama;T. Kusuda
提出了一种新的注入杂质激活方法-闪光灯退火技术。弗拉能够将加热周期的时间缩短到毫秒范围内。利用该技术，实现了突变分布，掺杂剂浓度可以超过通过常规快速热退火（RTA）或炉退火获得的最大载流子浓度。与激光退火方法相比，弗拉可以激活直径为8英寸的衬底中的掺杂剂，同时严格控制掺杂剂的扩散，从而不会通过辐射熔化衬底表面。弗拉提供了制造具有良好特性的亚0.1微米MOSFET的可能性。
Flash-lamp annealing (FLA) technology, a new method of activating implanted impurities, is proposed. FLA is able to reduce the time of the heating cycle to within the millisecond range. With this technology, an abrupt profile is realized, with a dopant concentration that can exceed the maximum carrier concentration obtained by conventional rapid thermal annealing (RTA) or furnace annealing. In contrast to a laser annealing method, FLA can activate dopants in an 8-inch-diameter substrate and, simultaneously, strictly control diffusion of dopants so as not to melt the substrate surface by radiation. FLA presents the possibility of fabricating sub-0.1-µm MOSFETs with good characteristics.