High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers
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DOI：
10.1109/jeds.2015.2503701
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发表时间：
2016
影响因子：
2.3
通讯作者：
E. Ture;P. Bruckner;B. Godejohann;R. Aidam;M. Alsharef;R. Granzner;F. Schwierz;R. Quay;O. Ambacher
中科院分区：
文献类型：
--
作者：
E. Ture;P. Bruckner;B. Godejohann;R. Aidam;M. Alsharef;R. Granzner;F. Schwierz;R. Quay;O. Ambacher
通过实现三维三栅拓扑结构，GaN基高电子迁移率晶体管（HEMT）已经制作和高频性能以及短沟道效应进行了研究。所设计的三栅极晶体管是高度缩放的，具有100 nm的栅极长度，这引入了短沟道的条件。结果表明，更高的亚阈值斜率，减少漏致势垒降低和更好的整体关态性能已实现的纳米沟道三栅高电子迁移率晶体管与AlGaN势垒。在鳍形纳米沟道的帮助下，晶格匹配的InAlGaN势垒提供了改进的栅极控制、增加的电流密度和介电常数。在直接比较中，通过采用纯AlN阻挡层进一步获得了非常高的漏极电流密度（~3.8 A/mm）和gm（~550 mS/mm）。
Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances as well as the short-channel effects are investigated. The designed tri-gate transistors are highly-scaled having 100 nm of gate length, which introduces the condition of a short channel. It is demonstrated that higher sub-threshold slopes, reduced drain-induced barrier lowering and better overall off-state performances have been achieved by the nano-channel tri-gate HEMTs with an AlGaN barrier. A lattice-matched InAlGaN barrier with the help of the fin-shaped nano-channels provide improved gate control, increasing current densities, and transconductance gm. In a direct comparison, very high drain current densities (~3.8 A/mm) and gm (~550 mS/mm) have further been obtained by employing a pure AlN barrier.