Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
复制标题
GaAs 覆盖层沉积后 GaAs(001) 上 InAs 岛的形态转变
DOI：
10.1063/1.112883
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发表时间：
1994
影响因子：
4
通讯作者：
Y. Nabetani
中科院分区：
文献类型：
--
作者：
X. Lin;J. Washburn;Z. Liliental;E. Weber;A. Sasaki;A. Wakahara;Y. Nabetani
用透射电子显微镜和原子力显微镜研究了GaAs帽层与邻位GaAs（001）上生长的InAs岛之间的相互作用。在480 °C下通过分子束外延制备样品。在GaAs帽沉积时，发现先前生长的InAs岛经历了一种新型的形态转变，即，从盘状岛到环状岛的过渡InAs在盘状InAs岛的中心区域耗尽或完全消失。GaAs帽也被证明在相同的中心区域内几乎不存在，导致形成火山口状的表面凹陷。
The interaction between a GaAs cap and InAs islands grown on vicinal GaAs(001) has been studied by transmission electron microscopy and atomic force microscopy. Samples were prepared by molecular beam epitaxy at 480 °C. Upon GaAs cap deposition, it was found that the previously grown InAs islands undergo a novel type of morphological transition, i.e., a transition from disk‐shaped to ring‐shaped islands. InAs becomes depleted or entirely absent in the central area of what had been a disk‐shaped InAs island. The GaAs cap was also shown to be virtually absent within the same central region, resulting in the formation of crater‐like surface depressions.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM