Electrically injected near-infrared light emission from single InN nanowire p-i-n diode
Electrically injected near-infrared light emission from single InN nanowire p-i-n diode
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DOI：
10.1063/1.4904271
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发表时间：
2014-12
影响因子：
4
通讯作者：
B. Le;Songrui Zhao;N. H. Tran;Z. Mi
中科院分区：
文献类型：
--
作者：
B. Le;Songrui Zhao;N. H. Tran;Z. Mi
We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.
