High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target
High room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target
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DOI：
10.1063/1.2001755
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发表时间：
2005-08
影响因子：
4
通讯作者：
J. Walachová;R. Zeipl;J. Zelinka;V. Malina;M. Pavelka;M. Jelínek;V. Studnička;P. Lošťák
中科院分区：
文献类型：
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作者：
J. Walachová;R. Zeipl;J. Zelinka;V. Malina;M. Pavelka;M. Jelínek;V. Studnička;P. Lošťák
通过Harman方法在不同厚度的单个热电层上制备的简单器件上测量品质因数ZT。采用激光烧蚀Bi2Te3靶，在不同条件下制备了热电薄膜。对于我们的器件，最佳测量的品质因数ZT为ZT=2.65。这一结果与超晶格的结果相当。ZT随层厚的变化而振荡。在某些器件上，测量塞贝克系数，并使用沿热电层沿着的电导率测量，从ZT估计热导率。样品的低热导率是由量子尺寸效应和热电层中存在少量Bi 2（m+n）Te 3n型相来解释的。
The figure of merit ZT is measured by a Harman method on simple devices prepared on single thermoelectric layers of different thicknesses. The thermoelectric layers are prepared at different conditions by laser ablation from Bi2Te3 target. The best measured figure of merit ZT is for our devices ZT=2.65. This result is comparable with the results obtained on superlattices. ZT oscillated with the thickness of the layers. On some devices the Seebeck coefficient is measured and using conductivity measurements along the thermoelectric layers the thermal conductivity is estimated from ZT. The low thermal conductivity of samples is explained by the quantum size effect and by existence of few phases of type Bi2(m+n)Te3n in the thermoelectric layers.