The effects of thickness and operation temperature on ZnO:Al thin film CO gas sensor
The effects of thickness and operation temperature on ZnO:Al thin film CO gas sensor
复制标题
DOI：
10.1016/s0925-4005(02)00034-5
复制
发表时间：
2002-05-15
影响因子：
8.4
通讯作者：
Hon, MH
中科院分区：
文献类型：
--
作者：
Chang, JF;Kuo, HH;Hon, MH
采用射频磁控溅射法在SiO2/Si衬底上制备了Al掺杂ZnO薄膜作为CO气体传感器。研究了薄膜厚度对CO气敏性能的影响，通过控制沉积时间来改变薄膜厚度。用X射线衍射、扫描电子显微镜和原子力显微镜对薄膜的结构进行了表征。通过原位测量薄膜的表面电阻，研究了薄膜的CO气敏特性与薄膜厚度、不同气氛和工作温度的关系。结果表明，薄膜平整光滑，具有（0 0 0 1）择优取向.在沉积过程中，晶粒尺寸随着膜厚度的增加而增加。在这里，CO气敏性能是相对于结构特性，其中最大的灵敏度为61.6%，在65 nm的膜厚为400 degreesC的工作温度下获得。(C)2002 Elsevier Science B. V.保留所有权利。
Al-doped ZnO films were deposited onto SiO2/Si substrates by rf magnetron sputtering system as a CO gas sensor. The dependence of the thin film thickness on CO gas sensing properties was investigated, where the film thickness was varied by controlling the deposition time. The structure of the deposited ZnO:Al films was determined by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The CO gas sensing properties were determined by in situ measurement for surface resistance of the thin film as a function of film thickness, different atmosphere, and operation temperature. It was shown that the films were flat and smooth with (0 0 0 1) preferred orientation. The grain size was increased as the film thickness was increased during deposition. Here, the CO gas sensing properties were relative to the structural characteristics where the maximum sensitivity of 61.6% was obtained at 65 nm film thickness for the operation temperature of 400 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.