A 65-nm SOTB implementation of a physically unclonable function and its performance improvement by body bias control
A 65-nm SOTB implementation of a physically unclonable function and its performance improvement by body bias control
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物理不可克隆功能的 65 nm SOTB 实现及其通过体偏置控制的性能改进
DOI：
10.1109/s3s.2017.8309209
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Yasuhiro Ogasahara
中科院分区：
文献类型：
--
作者：
Yohei Hori;Toshihiro Katashita;Yasuhiro Ogasahara
本研究探讨了将薄埋氧化硅（SOTB）器件用于物理不可克隆功能（PUF）的可行性，以及SOTB的体偏置对PUF性能的影响。SOTB的低可变性对于电路的超低功耗操作是理想的，而它可能导致PUF的性能下降，因为PUF通过利用器件可变性生成唯一的芯片ID。本文首次报道了在PUF中使用降低可变性SOTB的可行性。我们在65nm SOTB工艺中制备了仲裁PUF，并测量了核心电压在0.4-0.8 V范围内和体偏置在-0.5-0.5 V范围内的PUF响应。我们证明了SOTB可以成功地用于实现PUF，并且可以通过调整SOTB的体偏置来提高其性能。
This study explores the feasibility of using silicon-on-thin-buried oxide (SOTB) devices for physically unclonable functions (PUFs) and the effect of body biasing of the SOTB on the performance of a PUF. The low variability of the SOTB is desirable for ultra-low-power operation of the circuit, whereas it can cause performance decrease in a PUF, because a PUF generates a unique chip ID by exploiting the device variability. This paper reports the feasibility of using a reduced-variability SOTB for a PUF for the first time. We fabricated arbiter PUFs in the 65-nm SOTB process and measured the PUF responses for core voltages in the range of 0.4-0.8 V and body bias in the range of -0.5-0.5 V. We demonstrated that the SOTB can be used to implement a PUF successfully, and its performance can be improved by adjusting the body bias of the SOTB.