High cut-off frequency RF switches integrating a metal-insulator transition material
High cut-off frequency RF switches integrating a metal-insulator transition material
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集成金属-绝缘体过渡材料的高截止频率射频开关
DOI：
10.1109/mwsym.2015.7166910
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
A. Crunteanu
中科院分区：
文献类型：
--
作者：
A. Mennai;A. Bessaudou;F. Cosset;C. Guines;D. Passerieux;P. Blondy;A. Crunteanu
介绍了基于二氧化钒（VO 2）相变材料的两端面内射频开关的设计和射频性能。VO 2材料经历热驱动的金属-绝缘体转变，当材料在其绝缘体和金属状态之间变化时，电阻率变化高达五个数量级。我们实现了集成不同长度（3到20 μm）VO 2图案的内联RF开关，并研究了它们的热致动和电致动的开关特性。对于一个3 μm长的热驱动VO 2模式开关，我们测得其关态电容为7.7 Ff，通态电阻约为2 Ω，截止频率高于10 THz。
We present the design and the RF performances of two-terminals in-plane RF switches based on dioxide vanadium (VO2)-phase transition material. The VO2 material undergoes a thermally-driven metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material changes between its insulator and metallic states. We realized inline RF switches integrating VO2 patterns of different lengths (3 to 20 μm) and investigated their switching properties for both thermal and electrical actuation. For a thermally actuated 3-μm length VO2 pattern switch we measured an off-state capacitance of 7.7 Ff and an on-state resistance of ~2 Ω, with a cut-off frequency higher than 10 THz.