A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns
A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns
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DOI：
10.1063/1.3078817
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发表时间：
2009-02
影响因子：
4
通讯作者：
I. García;I. Rey‐Stolle;B. Galiana;C. Algora
中科院分区：
文献类型：
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作者：
I. García;I. Rey‐Stolle;B. Galiana;C. Algora
光伏转换效率分别为32.6%和30%，在1000和3500太阳的浓度，分别实现了单片GaInP/GaAs双结太阳能电池的晶格匹配GaAs衬底上的金属有机物气相外延生长。隧道结的设计，基于（Al）GaAs/GaAs异质结，被认为是在这样高的浓度下实现这种效率的关键因素。此外，使用准三维分布式模型对前栅极和顶单元发射极进行彻底设计和联合优化也起着重要作用。通过将这种方法扩展到三结器件，在1000个太阳下的效率应超过40%。
Photovoltaic conversion efficiencies of 32.6% and 30% at concentrations of 1000 and 3500 suns, respectively, are achieved in monolithic GaInP/GaAs dual-junction solar cells grown lattice matched on a GaAs substrate by metal-organic vapor-phase epitaxy. The tunnel-junction design, based on an (Al)GaAs/GaAs heterojunction, is found to be a key factor for achieving this efficiency at such high concentrations. Moreover, the thorough design and joint optimization of the front grid and the top-cell emitter, using quasi-three-dimensional distributed models, also plays a major role. Efficiencies of over 40% at 1000 suns should be achieved by extending this approach to triple-junction devices.