Two-dimensional strain mapping in semiconductors by nano-beam electron diffraction employing a delay-line detector
Two-dimensional strain mapping in semiconductors by nano-beam electron diffraction employing a delay-line detector
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DOI：
10.1063/1.4927837
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发表时间：
2015-08-17
影响因子：
4
通讯作者：
Potapov, Pavel
中科院分区：
文献类型：
--
作者：
Mueller-Caspary, Knut;Oelsner, Andreas;Potapov, Pavel
建立了一种用于扫描透射电子显微镜（STEM）电子探测的延迟线探测器，并将其应用于硅基场效应晶体管的二维应变映射。我们首先概述了位置敏感的延迟线检测的功能原理，基于高精度的时间测量的电子脉冲在曲折的电线。特别地，检测器是基本上提供位置分辨事件的无限时间流的单计数设备，使得采集速度不受在常规电荷耦合设备中发生的检测器读出的阻碍。通过在100 x 100光栅上扫描场效应晶体管的应力器和栅极区域上的STEM探针，根据扫描速度，在3-6.5 min内获得了10000个衍射图案。对004和220反射的评估在1.6 nm的空间分辨率下产生横向和垂直应变。对于40和20 ms的帧时间，可以分别实现1.2 - 1.8 x 10（-3）的剂量依赖性应变精度。最后，检测器的特点是量子效率和进一步的应用范围进行了概述。(C)2015年作者。
A delay-line detector is established for electron detection in the field of scanning transmission electron microscopy (STEM) and applied to two-dimensional strain mapping in Si-based field effect transistors. We initially outline the functional principle of position-sensitive delay-line detection, based on highly accurate time measurements for electronic pulses travelling in meandering wires. In particular, the detector is a single-counting device essentially providing an infinite time stream of position-resolved events so that acquisition speed is not hindered by detector read-outs occurring in conventional charge-coupled devices. By scanning the STEM probe over stressor-and gate regions of a field effect transistor on a 100 x 100 raster, 10 000 diffraction patterns have been acquired within 3-6.5 min, depending on the scan speed. Evaluation of the 004 and 220 reflections yields lateral and vertical strain at a spatial resolution of 1.6 nm. Dose-dependent strain precisions of 1.2 - 1.8 x 10(-3) could be achieved for frame times of 40 and 20 ms, respectively. Finally, the detector is characterised as to quantum efficiency and further scopes of application are outlined. (C) 2015 Author(s).