Nanophotonic integration in state-of-the-art CMOS foundries

Nanophotonic integration in state-of-the-art CMOS foundries
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DOI:
10.1364/oe.19.002335
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发表时间:
2011-01-31
期刊:
影响因子:
3.8
通讯作者:
Ram, Rajeev J.
Ram, Rajeev J.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Orcutt, Jason S.;Khilo, Anatol;Ram, Rajeev J.

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我们展示了一个单片光子集成平台,利用现有的国家的最先进的CMOS代工基础设施。在我们的方法中,经过验证的XeF(2)后处理技术和符合电子铸造工艺流程的要求,消除了对专用衬底或晶圆键合的需求。这种方法能够以低初始成本和增量成本将大量纳米光子器件与高密度、高性能晶体管紧密集成。我们展示了这个平台,提出光栅耦合,微谐振器滤波器组在未经修改的28纳米体CMOS工艺制造共享一个掩模集与标准的电子项目。该工艺的光刻保真度使二阶波分复用(WDM)滤波器组的高吞吐量制造成为可能,这些滤波器组实现了低插入损耗,而无需制造后修整。2010美国光学学会Optical Society of America
We demonstrate a monolithic photonic integration platform that leverages the existing state-of-the-art CMOS foundry infrastructure. In our approach, proven XeF(2) post-processing technology and compliance with electronic foundry process flows eliminate the need for specialized substrates or wafer bonding. This approach enables intimate integration of large numbers of nanophotonic devices alongside high-density, high-performance transistors at low initial and incremental cost. We demonstrate this platform by presenting grating-coupled, microring-resonator filter banks fabricated in an unmodified 28 nm bulk-CMOS process by sharing a mask set with standard electronic projects. The lithographic fidelity of this process enables the high-throughput fabrication of second-order, wavelength-division-multiplexing (WDM) filter banks that achieve low insertion loss without post-fabrication trimming. (C)2010 Optical Society of America