Total ionizing dose effects of optical components on an optically reconfigurable gate array
Total ionizing dose effects of optical components on an optically reconfigurable gate array
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光学元件对光学可重构门阵列的总电离剂量效应
DOI：
10.1007/978-3-319-16214-0_35
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
H. Makawa
中科院分区：
文献类型：
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作者：
R. Moriwaki;H. Ito;K. Akagi;M. Watanabe;A. Ogiwara;H. Makawa
最近，光学可重构门阵列(ORGA)被开发为辐射加固的现场可编程门阵列(FPGA)，以实现10mrad的总电离剂量耐受性。具体地说，ORGA提供高速重新配置、大量重新配置上下文和健壮配置的重要优势。这三个因素对于消除可编程门阵列上配置电路的软误差和提高总电离剂量容差具有重要意义。虽然已经使用辐射仿真证实了稳健的配置能力，但到目前为止，相关文献中还没有报道实际的辐射实验。因此，本文介绍了一种使用钴-60伽马辐射源的光学可重构门阵列的辐射耐受性增强的实验。
Recently, optically reconfigurable gate arrays (ORGAs) have been developed as radiation-hardened field programmable gate arrays (FPGAs) to realize a 10 Mrad total ionizing dose-tolerance. Specifically, ORGAs offer important benefits of high-speed reconfiguration, numerous reconfiguration contexts, and robust configuration. These three factors are important to remove the soft-error of a configuration circuit on a programmable gate array and to increase the total ionizing dose tolerance. Although the robust configuration capability has been confirmed using radiation emulation, no actual radiation experiment has been reported to date in the relevant literature. This paper therefore presents experiments demonstrating the enhanced radiation tolerance of an optically reconfigurable gate array using a cobalt-60 gamma radiation source.