Radiation effects in silicon solar cells

Radiation effects in silicon solar cells
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硅太阳能电池的辐射效应

DOI:
10.1080/00337577008242019
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发表时间:
1970
影响因子:
1
通讯作者:
R. Statler
R. Statler
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
R. Statler

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在过去的十年中,硅太阳能电池已被用作空间卫星的主要电能来源。尽管这些光电装置很可靠,但它们在地球磁场中的带电粒子辐射使其输出功率下降仍然是它们在长时间飞行中使用的主要问题。本文研究了1 MeV电子在不同类型硅太阳电池中引起的辐射损伤与掺杂杂质和基区电阻率的关系。一项关于标称0.2 MeV质子引起的辐射损伤的配套研究在太阳能电池中进行,盖板旁边有小的电池区域暴露在盖板上。在空气质量为零时,在发射140mW/cm2的太阳模拟器下测量光伏电流-电压特性。在室温下以1 × 1015 e/cm2和1 × 1015 p/cm2的影响进行辐照。大影响后10欧姆-cm电池的效率为…
Abstract Silicon solar cells have been utilized as the principal source of electrical energy for space satellites during the past decade. Despite the reliability of these photovoltaic devices, degradation of their power output by charged particle radiation in the earth's geomagnetic field has continued to be the primary problem for their use on flights of long-duration. A study of radiation damage induced by 1 MeV electrons in a variety of current silicon solar cell types has been conducted as a function of dopant impurity and resistivity of the base region. A companion study of radiation damage induced by nominal 0.2 MeV protons was performed in solar cells with coverslips having small cell areas exposed alongside the coverslip. The photovoltaic current-voltage characteristics were measured under a solar simulator emitting 140mW/cm2 at air mass zero. Irradiations were performed at room temperature to fluences of 1 × 1015 e/cm2 and 1 × 1015 p/cm2. The efficiency of 10 ohm-cm cells after large fluences was...