Radiation effects in silicon solar cells
Radiation effects in silicon solar cells
复制标题
硅太阳能电池的辐射效应
DOI:
10.1080/00337577008242019
复制
发表时间:
1970
影响因子:
1
通讯作者:
R. Statler
中科院分区:
文献类型:
--
作者:
R. Statler
Abstract Silicon solar cells have been utilized as the principal source of electrical energy for space satellites during the past decade. Despite the reliability of these photovoltaic devices, degradation of their power output by charged particle radiation in the earth's geomagnetic field has continued to be the primary problem for their use on flights of long-duration. A study of radiation damage induced by 1 MeV electrons in a variety of current silicon solar cell types has been conducted as a function of dopant impurity and resistivity of the base region. A companion study of radiation damage induced by nominal 0.2 MeV protons was performed in solar cells with coverslips having small cell areas exposed alongside the coverslip. The photovoltaic current-voltage characteristics were measured under a solar simulator emitting 140mW/cm2 at air mass zero. Irradiations were performed at room temperature to fluences of 1 × 1015 e/cm2 and 1 × 1015 p/cm2. The efficiency of 10 ohm-cm cells after large fluences was...