AN INTEGRATED SIDEBAND SEPARATING SIS MIXER FOR 200-280 GHz
AN INTEGRATED SIDEBAND SEPARATING SIS MIXER FOR 200-280 GHz
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发表时间：
1998
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通讯作者：
Mma Memo;A. Kerr;S. Pan;H. Leduc
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作者：
Mma Memo;A. Kerr;S. Pan;H. Leduc
用于信号和LO的单独波导通过悬挂带状线连接到2 x 1 mm石英基板，该基板包含边带分离混频器的所有RE组件：正交混合器、LO功率分配器、两个LO耦合器和两个SIS混频器。这些组件是实现在capacitivelyloaded共面波导，这最大限度地减少了相邻组件之间的杂散耦合和耦合到厚石英基板中的不需要的模式。在200-280 GHz频段上，混频器噪声温度为50-150 K，整体接收机噪声温度为60-200 K（均在真空窗口外测量）。边带分离是。我们希望通过减少衬底下LO功率泄漏到信号端口，并通过改善输入正交混合电路第四端口的冷端接匹配来改善。
Separate waveguides for the signal and LO are connected via suspended striplines to a 2 x 1 mm quartz substrate which contains all the RE components of the sideband separating mixer: quadrature hybrid, LO power splitter, two LO couplers, and two SIS mixers. These components are realized in capacitivelyloaded coplanar waveguide, which minimizes stray coupling between adjacent components and coupling to undesired modes in the thick quartz substrate. Over the 200-280 GHz band, the mixer noise temperature was 50-150 K and the overall receiver noise temperature was 60-200 K (both measured outside the vacuum window). The sideband separation was . 9 dB, which we hope to improve by reducing leakage of LO power under the substrate into the signal port, and by improvin g the match of the cold termination of the fourth port of the input quadrature hybrid.