Output properties of C60 field-effect transistors with au electrodes modified by 1-alkanethiols
Output properties of C60 field-effect transistors with au electrodes modified by 1-alkanethiols
复制标题
DOI：
10.1021/jp0708751
复制
发表时间：
2007-05-17
影响因子：
3.7
通讯作者：
Fujiwara, Akihiko
中科院分区：
文献类型：
--
作者：
Nagano, Takayuki;Tsutsui, Michiko;Fujiwara, Akihiko
具有 C-60 薄膜的场效应晶体管 (FET) 是用经过一系列 1-链烷硫醇修饰的 Au 电极制成的。所有 C-60 FET 都具有正常 FET 特性的 n 沟道。研究发现，具有长烷基链 1-烷硫醇修饰的 Au 电极的 FET 的输出特性在很大程度上受到载流子注入势垒的影响（即，电流与漏极/源极电压图在低电压区域表现出上凹非线性）。输出特性基本上由插入 Au 电极和 C-60 薄膜结的 1-链烷硫醇的附加隧道势垒决定，并且与结势垒高度和隧道效率相关的参数是根据基于双肖特基势垒的热电子发射模型的输出特性确定的。
Field-effect transistors (FETs) with thin films of C-60 have been fabricated with Au electrodes modified by a series of 1-alkanethiols. All C-60 FETs show n-channels of normal FET properties. It has been found that the output properties for the FETs with the Au electrodes modified by 1-alkanethiols with long alkyl chains are largely affected by the carrier-injection barrier (i.e., the current vs drain/source voltage plots exhibited concave-up nonlinearity at low voltage regions). The output properties are substantially dominated by an additional tunneling barrier of 1-alkanethiols inserted into the junction of the Au electrode and C-60 thin films, and the parameters associated with the junction barrier height and tunneling efficiency were determined from the output properties based on the thermionic emission model for double Schottky barriers.