Electrical Investigation of the Semiconductor‐to‐Metal Transition in FeSi2
Electrical Investigation of the Semiconductor‐to‐Metal Transition in FeSi2
复制标题
FeSi2 中半导体到金属转变的电学研究
DOI：
10.1002/pssb.19690340269
复制
发表时间：
1969
影响因子：
1.6
通讯作者：
J. Schelm
中科院分区：
文献类型：
--
作者：
U. Birkholz;J. Schelm
在之前的一篇论文(1)中，我们描述了半导体低温相（4-FeSiz）的输运性质。通过快速冷却可以获得亚稳态的金属高温相（oc-FeSi2）。电导率6'-2000 Q'lcm- 1在4和1400 OK之间没有变化。我们将这种行为归因于oc-FeSi2中高浓度的铁空位（约10 - 20%的铁原子），而这在化学计量成分中不存在（2,3）。为了研究相变的性质，我们测量了相变温度附近的电导率。图1和图2显示了化学计量FeSi2（50）的电导率。15-i)和含有多余硅（51.3-i）的F&i2随温度的变化。在低温下，电导率的增加在图上呈线性
2 In a previous paper (1) we have described the transport properties of the semiconducting low temperature phase (4-FeSiz). The metallic high-temperature phase (oc-FeSi2) can be obtained in a metastable state by rapid cooling. The conductivity 6'-2000 Q'lcm-l does not change between 4 and 1400 OK. We ascribe this behaviour to the high concentration of iron vacancies (about 10 to 20% of the Fe atoms) in oc-FeSi2, which does not exist in stoichiometric composition (2, 3). In order to study the nature of the phase transition we made measurements of the electrical conductivity near the transition temperature. Figs. 1 and 2 show the conductivity of stoichiometric FeSi2 (50. 15-i) and of F&i2 with excess silicon (51.3-i) vs. temperature. At low tempbratures the increase in conductivity is linear on the plot