Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors
Localizing trapped charge carriers in NO2 sensors based on organic field-effect transistors
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DOI：
10.1063/1.4758697
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发表时间：
2012-10-08
影响因子：
4
通讯作者：
de Leeuw, Dago M.
中科院分区：
文献类型：
--
作者：
Andringa, Anne-Marije;Roelofs, W. S. Christian;de Leeuw, Dago M.
场效应晶体管已成为 NO2 传感器。检测依赖于捕获累积的电子，从而导致阈值电压发生变化。为了确定捕获电子的位置，我们用胶带将不同的半导体从晶体管上剥离，并用扫描开尔文探针显微镜测量了暴露的栅极电介质的表面电位。我们明确地表明，捕获的电子并不位于半导体中，而是位于栅极电介质中。讨论了微观起源。精确定位为优化 NO2 场效应传感器的灵敏度铺平了道路。 (C) 2012 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4758697]
Field-effect transistors have emerged as NO2 sensors. The detection relies on trapping of accumulated electrons, leading to a shift of the threshold voltage. To determine the location of the trapped electrons we have delaminated different semiconductors from the transistors with adhesive tape and measured the surface potential of the revealed gate dielectric with scanning Kelvin probe microscopy. We unambiguously show that the trapped electrons are not located in the semiconductor but at the gate dielectric. The microscopic origin is discussed. Pinpointing the location paves the way to optimize the sensitivity of NO2 field-effect sensors. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758697]