InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
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DOI：
10.1049/el:20020793
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发表时间：
2002-09-12
影响因子：
1.1
通讯作者：
Bimberg, D
中科院分区：
文献类型：
--
作者：
Kovsh, AR;Maleev, NA;Bimberg, D
多层（最多 10 层）InAs/InGaAs/GaAs 量子点显着增强了发射约 1.3 μM 量子点激光器的光学增益。这些激光器的差异效率高达 88%。在一台器件中同时实现了1.28μm的发射波长、147A/CM2的阈值电流密度、80%的微分效率和150K的特征温度。
Multiple layers (up to 10) of InAs/InGaAs/GaAs quantum dots considerably enhance the optical gain of quantum dot lasers emitting around 1.3 muM. A differential efficiency as high as 88% has been achieved in these lasers. An emission wavelength of 1.28 mum, threshold current density of 147 A/CM2, differential efficiency of 80%, and characteristic temperature of 150 K have been realised simultaneously in one device.