Synthesis and characterization of dimensionally ordered semiconductor nanowires within mesoporous silica
Synthesis and characterization of dimensionally ordered semiconductor nanowires within mesoporous silica
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DOI：
10.1021/ja015833j
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发表时间：
2001-07-25
影响因子：
15
通讯作者：
Holmes, JD
中科院分区：
文献类型：
--
作者：
Coleman, NRB;O'Sullivan, N;Holmes, JD
半导体纳米线的硅已合成内孔二氧化硅使用一种新的超临界流体溶液相的方法。介孔二氧化硅，形成的水解四甲氧基硅烷（TMOS）在三嵌段共聚物表面活性剂的存在下，用于量子限制纳米线的成核和生长。用晶体硅填充二氧化硅介孔并将这些纳米线锚定到笔的侧面通过几种技术来证实，包括电子显微镜、粉末X射线衍射、Si-29魔角自旋核磁共振、红外光谱和X射线荧光。有效地，二氧化硅基质提供了在低介电介质中产生高密度的稳定的、良好有序的半导体纳米线阵列的手段。硅纳米线的有序阵列还表现出离散的电子和光致发光跃迁，可以在许多应用中利用，包括纳米器件和互连。
Semiconductor nanowires of silicon have been synthesized within the ports of mesoporous silica using a novel supercritical fluid solution-phase approach. Mesoporous silica, formed by the hydrolysis of tetramethoxysilane (TMOS) in the presence of a triblock copolymer surfactant, was employed for the nucleation and growth of quantum-confined nanowires. The filling of the silica mesopores with crystalline silicon and the anchoring of these nanowires to the sides of the pens were confirmed by several techniques including electron microscopy, powder X-ray diffraction, Si-29 magic angle spinning nuclear magnetic resonance, infrared spectroscopy, and X-ray fluorescence. Effectively, the silica matrix provides a means of producing a high density of stable, well-ordered arrays of semiconductor nanowires in a low dielectric medium. The ordered arrays of silicon nanowires also exhibited discrete electronic and photoluminescence transitions that could be exploited in a number of applications, including nanodevices and interconnects.