The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films
The influence of oxygen content in the sputtering gas on the self-synthesis of tungsten oxide nanowires on sputter-deposited tungsten films
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DOI：
10.1088/0957-4484/17/1/036
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发表时间：
2005-09
期刊：
影响因子：
3.5
通讯作者：
Chao-Hsuing Chen;Shui-Jinn Wang;R. Ko;Y. Kuo;K. Uang;Tron-min Chen;B. Liou;H. Tsai
中科院分区：
文献类型：
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作者：
Chao-Hsuing Chen;Shui-Jinn Wang;R. Ko;Y. Kuo;K. Uang;Tron-min Chen;B. Liou;H. Tsai
报道了在不同的O2/Ar流量比（OAFRR）下，在溅射沉积的W膜上自合成氧化钨（W18 O 49）纳米线的研究。在700-850 °C下在N2气氛中热退火15分钟后，根据溅射气体中的氧含量，获得致密且结晶良好的W18 O 49（010）纳米线或纳米带。实验结果表明，随着溅射气体中OAFRR的增加，W18 O 49纳米线完全生长所需的退火温度降低。研究发现，纳米线的生长主要是由于表面区域的氧吸附。当OAFRR增加到（8 sccm）/（24 sccm）时，这导致约55 at.%的饱和氧含量在W膜内部，生长了W18 O 49的大尺度纳米带或纳米片。可能的生长机制，管理的演变从纳米线到纳米带的OAFRR的变化进行了讨论。
The self-synthesis of tungsten oxide (W18O49) nanowires on sputter-deposited W films prepared under different O2/Ar flow rate ratios (OAFRRs) in the sputtering gas is reported. After thermally annealing at 700–850 °C in N2 ambient for 15 min, dense and well crystalline W18O49 (010) nanowires or nanobelts were obtained depending on the oxygen content in the sputtering gas. Experimental results show that the annealing temperature required for the full growth of W18O49 nanowires reduced when the OAFRR in the sputtering gas was increased. It is found that the oxygen absorbed in the surface region is responsible for the growth of nanowires. As the OAFRR was increased to (8 sccm)/(24 sccm), which resulted in a saturated oxygen content of about 55 at.% inside the W film, large-scale nanobelts or nanosheets of W18O49 were grown. The possible growth mechanism which governs the evolution from nanowires to nanobelts as the OAFRR was changed is also discussed.