The 3D nanometer device project nextnano: Concepts, methods, results
The 3D nanometer device project nextnano: Concepts, methods, results
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DOI：
10.1007/s10825-006-0005-x
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发表时间：
2006-12-01
影响因子：
2.1
通讯作者：
Vogl, Peter
中科院分区：
文献类型：
--
作者：
Trellakis, Alex;Zibold, Tobias;Vogl, Peter
Nextnano是一个模拟工具，旨在提供对真实三维介观半导体结构的基本物理特性的全面了解。它侧重于量子力学性质，如全球电子结构，光学性质，以及电场和磁场对几乎任何几何形状和半导体材料组合的影响。对于载流子动力学的计算，目前实现了两种模型，其提供了高度扩散或纯弹道量子力学输运的极限情况的结果。在本文中，我们提出了一个概述nextnano的现在和未来的能力，并讨论了一些关键的概念，在该地区的代码结构，数值技术和电子结构的原则。
nextnano is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of carrier dynamics, two models are currently implemented that provide results for the limiting cases of highly diffusive or purely ballistic quantum-mechanical transport. In this paper, we present an overview of nextnano's present and future capabilities and discuss some key concepts in the areas of code structure, numerical techniques, and electronic structure principles.