Phonon-induced decoherence and dissipation in donor-based charge qubits

Phonon-induced decoherence and dissipation in donor-based charge qubits
复制标题

基于供体的电荷量子位中声子引起的退相干和耗散

DOI：
10.1140/epjb/e2006-00346-y
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发表时间：
2006
期刊：
The European Physical Journal B - Condensed Matter and Complex Systems
影响因子：
--
通讯作者：
Michael Thorwart
Michael Thorwart
中科院分区：
--
文献类型：
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作者：
J. Eckel;S. Weiss;Michael Thorwart

文献摘要

被引文献

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抽象的。 我们研究了声子诱导的消相干和耗散， 基于施主的电荷量子比特由一个 由两个掺杂剂离子共享的电子，所述两个掺杂剂离子被注入到 硅基质晶体。掺杂剂离子取自V族 元素Bi，As，P，Sb。过量电子是 耦合到变形势声学声子， 是Si的宿主。特定的几何形状定制了非单调的频率 声子模式的分布。我们确定了量子位的确切动力学 在声子的影响下，采用 数值精确 准绝热传播子路径积分方案， 考虑到所有浴缸引起的相关性。我们尤其 通过完全消除Trotter改进了该方案 离散化误差由Hirsch-Fye外推。通过比较 与Born-Markov方程的精确结果 近似，我们发现后者产生适当的估计， 退相干和弛豫速率。然而，值得注意的是， 由于非马尔可夫贡献的修正出现。
Abstract. We investigate the phonon-induced decoherence and dissipation in a donor-based charge quantum bit realized by the orbital states of an electron shared by two dopant ions which are implanted in a silicon host crystal. The dopant ions are taken from the group-V elements Bi, As, P, Sb. The excess electron is coupled to deformation potential acoustic phonons which dominate in the Si host. The particular geometry tailors a non-monotonous frequency distribution of the phonon modes. We determine the exact qubit dynamics under the influence of the phonons by employing the numerically exact quasi-adiabatic propagator path integral scheme thereby taking into account all bath-induced correlations. In particular, we have improved the scheme by completely eliminating the Trotter discretization error by a Hirsch-Fye extrapolation. By comparing the exact results to those of a Born-Markov approximation we find that the latter yields appropriate estimates for the decoherence and relaxation rates. However, noticeable quantitative corrections due to non-Markovian contributions appear.