TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF SI
TEMPERATURE-DEPENDENCE OF THE DIELECTRIC FUNCTION OF SI
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DOI：
10.1063/1.347252
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发表时间：
1991-02-01
影响因子：
3.2
通讯作者：
ADACHI, S
中科院分区：
文献类型：
--
作者：
AOKI, T;ADACHI, S
本文介绍了一种计算硅的介电函数的真实的部分（虚部-1）和虚部（虚部-2）的方法，温度范围为30 ~ 793 K，光子能量范围为1.7 ~ 5.7 eV。 该模型揭示了E1 [二维（2D）M0临界点（CP）]，E2 [阻尼谐振子（DHO）和2D-M2 CP的混合物]，E '0和E' 1（DHO）能量处的不同结构。 在2D-M2 CP模型中采用Kramers-Kronig变换。 由于激子效应深刻地修改E1-间隙CP结构在低温下，该模型也占激子效应在此CP。 在整个光子能量范围内，结果与实验信息符合得令人满意。 给出了各CP处的强度和展宽参数随温度的变化关系，并进行了讨论。
A method is described for calculating the real (epsilon-1) and imaginary (epsilon-2) parts of the dielectric function of Si for temperatures between 30 and 793 K and for photon energies ranging from 1.7 to 5.7 eV. The model reveals distinct structures at energies of the E1 [two-dimensional (2D) M0 critical point (CP)], E2 [a mixture of damped harmonic oscillator (DHO) and 2D-M2 CP], E'0, and E'1 (DHO). The Kramers-Kronig transformation is employed in developing the 2D-M2 CP model. Since the excitonic effects profoundly modify the E1-gap CP structure at low temperatures, the model also accounts for the excitonic effects at this CP. Results are in satisfactory agreement with the experimental information over the entire range of photon energies. The temperature dependence of the strength and broadening parameters at each CP are also given and discussed.