Contact-metal dependent current injection in pentacene thin-film transistors
Contact-metal dependent current injection in pentacene thin-film transistors
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DOI：
10.1063/1.2813640
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发表时间：
2007-11
影响因子：
4
通讯作者：
Sui‐Dong Wang;T. Minari;T. Miyadera;K. Tsukagoshi;Y. Aoyagi
中科院分区：
文献类型：
--
作者：
Sui‐Dong Wang;T. Minari;T. Miyadera;K. Tsukagoshi;Y. Aoyagi
分析了顶接触并五苯薄膜晶体管的接触金属电流注入特性，发现接触区的局部迁移率服从Meyer-Neldel规则。指数陷阱分布，而不是金属/有机空穴注入势垒，提出并五苯薄膜晶体管的接触电阻的主导因素。可变的温度测量揭示了一个更窄的陷阱分布在铜接触相比，相应的金接触，这是一个更小的接触电阻的铜，尽管较低的功函数的起源。
Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.