Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films
Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films
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DOI：
10.1111/jace.13535
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发表时间：
2015-06-01
影响因子：
3.9
通讯作者：
Trolier-McKinstry, Susan
中科院分区：
文献类型：
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作者：
Marincel, Daniel M.;Zhang, Huairuo;Trolier-McKinstry, Susan
对于 Zr/Ti 比率为 45/55 和 52/48 的 Pb(Zr,Ti)O-3 薄膜，通过带激发压电响应力显微镜测量了工程 10 度、15 度和 24 度倾斜以及 10 度和 30 度扭曲晶界处和附近的畴壁运动。在最大角度扭曲和倾斜晶界的晶界处观察到非线性响应的最小值，而在 10 度倾斜晶界处观察到非线性响应的最大值。观察到的非线性响应与透射电子显微镜在横截面中成像的域配置相关。
Domain wall movement at and near engineered 10 degrees, 15 degrees, and 24 degrees tilt and 10 degrees and 30 degrees twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O-3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10 degrees tilt grain boundaries. The observed nonlinear response was correlated with the domain configurations imaged in cross section by transmission electron microscopy.