Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition
Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition
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DOI：
10.1143/jjap.39.l996
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发表时间：
2000-10-01
期刊：
影响因子：
--
通讯作者：
Funakubo, H
中科院分区：
文献类型：
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作者：
Nagashima, K;Aratani, M;Funakubo, H
采用金属有机化学气相沉积（MOCVD）技术，在（1 1 1）Pt/Ti/SiO2/Si衬底上于620℃下制备了Zr/（Zr + Ti）为0.42的Pb（Zr，Ti）O-3（PZT）薄膜。我们尝试将源气体混合物脉冲引入反应室，并通过这种制备方法成功地同时改善了 PZT 薄膜的结晶度、表面粗糙度和电性能。 (111)取向增加，表面粗糙度降低。此外，漏电流降低，并且获得了良好饱和的对称极化电场（P-E）磁滞回线。该脉冲MOCVD薄膜的剩余极化(P-r)和矫顽场(E-c)值分别为44μC/cm(2)和85kV/cm。
Pb(Zr, Ti)O-3 (PZT) thin films with Zr/(Zr + Ti) of 0.42 were prepared on (1 1 1)Pt/Ti/SiO2/Si substrates at 620 degreesC by metalorganic chemical vapor deposition (MOCVD). We attempted the pulse introduction of a mixture of source gases into the reaction chamber and succeeded in simultaneous improvements of the crystallinity, surface roughness and electrical properties of the PZT film by this preparation method. The (111)-orientation increased and the surface roughness decreased. Moreover, the leakage decreased and well-saturated symmetrical polarization-electric field (P-E) hysteresis loop were obtained. Remanent polarization (P-r) and the coercive field (E-c) values of this pulse-MOCVD film were 44 muC/cm(2) and 85 kV/cm, respectively.