Direct chemisorption site selectivity for molecular halogens on the Si(111)-(7 x 7) surface.

Direct chemisorption site selectivity for molecular halogens on the Si(111)-(7 x 7) surface.
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Si(111)-(7 x 7) 表面上分子卤素的直接化学吸附位点选择性。

DOI:
10.1103/physrevlett.76.1388
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发表时间:
1996
影响因子:
8.6
通讯作者:
Kummel
Kummel
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Jensen;Yan;Kummel

文献摘要

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研究了Si(111)-(7× 7)晶胞中F2、Cl 2和B r2的直接化学吸附位置偏好.抽象的化学吸附,产生一个单一的化学吸附卤素原子,总是倾向于中心吸附原子吸附,这表明与最低的电子密度的网站是更活泼。解离化学吸附,产生一对化学吸附的卤素原子,显示出一个极端的偏好,最近的相邻对中心吸附原子。这些结果支持了逐步直接化学吸附机制的概念。
Direct chemisorption site preferences within the Si (111)-(7× 7) unit cell are examined for F 2, C l 2, and B r 2. Abstractive chemisorption, which produces a single chemisorbed halide atom, always prefers center adatom adsorption, indicating that the site with the lowest electron density is the more reactive. Dissociative chemisorption, which produces a pair of chemisorbed halide atoms, shows an extreme preference for the closest neighboring pair of center adatoms. The notion of a stepwise direct chemisorption mechanism is upheld by these results.