p-type transparent thin films of CuY1-xCaxO2
p-type transparent thin films of CuY1-xCaxO2
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DOI：
10.1016/s0040-6090(01)01362-1
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发表时间：
2001-10-01
期刊：
影响因子：
2.1
通讯作者：
Sleight, AW
中科院分区：
文献类型：
--
作者：
Jayaraj, MK;Draeseke, AD;Sleight, AW
采用热共蒸发法制备了CuY1-xCaxO2的p型导体薄膜。所述薄膜是在非晶衬底上的多晶薄膜和在结晶衬底上的c轴取向薄膜。钙掺杂是制备导电膜的必要条件，记录的最高电导率为1.0 S cm（-1）。对于厚度约为250nm的导电膜，在可见光区域的平均透明度约为40-50%，对于350nm的导电膜，在红外区域的平均透明度约为70%。光谱给出了带隙为3.5 eV的证据。我们展示了一种使用CuY1-xCaxO2/Zn1-xAlxO的全氧化物p-n二极管。(C) 2001 Elsevier Science B.V.版权所有
Thin films of CuY1-xCaxO2 that are p-type conductors have been prepared by thermal co-evaporation. The films are polycrystalline on amorphous substrates and c-axis oriented on crystalline substrates. Calcium doping was necessary to produce conductive films, and the highest conductivity recorded was 1.0 S cm(-1). The average transparency in the visible region is approximately 40-50%, for conducting films approximately 250 nm thick, and in the infrared approximately 70% for a 350-nm conducting film. The optical spectra give evidence for a bandgap, of 3.5 eV. We have demonstrated an all-oxide p-n diode using CuY1-xCaxO2/Zn1-xAlxO. (C) 2001 Elsevier Science B.V. All rights reserved.