Observation of nano-dots on HOPG surface induced by highly charged Ar(q+) impact

Observation of nano-dots on HOPG surface induced by highly charged Ar(q+) impact
复制标题

DOI:
10.1088/0256-307x/25/6/026
复制
发表时间:
2008-06
影响因子:
3.5
通讯作者:
Wang Tie-shan;Yang Xiu-yu;B. O’Rourke;Xu He;Chen Liang;Cheng Rui;Peng Hai-bo;Y. Mitsuda;Y. Yamazaki
Wang Tie-shan;Yang Xiu-yu;B. O’Rourke;Xu He;Chen Liang;Cheng Rui;Peng Hai-bo;Y. Mitsuda;Y. Yamazaki
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Wang Tie-shan;Yang Xiu-yu;B. O’Rourke;Xu He;Chen Liang;Cheng Rui;Peng Hai-bo;Y. Mitsuda;Y. Yamazaki

文献摘要

被引文献

相似文献

高电荷态离子(HCI)由于其高电荷态而具有巨大的势能。当HCI到达固体表面时,其势能立即在表面上释放,从而导致纳米级缺陷。因此,HCI有望用于纳米级的固体表面改性。用扫描探针显微镜(SPM)研究了高电荷态Arq ~+离子(能量为20- 2000 qeV)在高取向热解石墨(HOPG)表面上产生的缺陷。为了阐明动能和势能在表面改性中的作用,纳米缺陷的特征在于对应于HCI的动能和电荷状态的横向尺寸和高度。离子的势能和动能都会影响纳米缺陷的尺寸。由于势能随着电荷状态的增加而急剧增加,因此在极高电荷状态的情况下,势能效应预计将远大于动能效应。这意味着纯表面改性的纳米尺度上可以进行缓慢的高电荷离子。纳米缺陷区的平均尺寸也可以通过选择HCI的电荷态和动能来控制。
Highly charged ions (HCIs) have huge potential energy due to their high charge state. When a HCI reaches a solid surface, its potential energy is released immediately on the surface to cause a nano-scale defect. Thus, HCIs are expected to be useful for solid-surface modifications on the nano-scale. We investigate the defects on a highly oriented pyrolytic graphite (HOPG) surface induced by slow highly charged Arq+ ions with impact energy of 20–2000qeV with scanning probe microscopy (SPM). In order to clarify the role of kinetic and potential energies in surface modification, the nano-defects are characterized in lateral size and height corresponding to the kinetic energy and charge state of the HCIs. Both the potential energy and kinetic energy of the ions may influence the size of nano-defect. Since potential energy increases dramatically with increasing charge state, the potential energy effect is expected to be much larger than the kinetic energy effect in the case of extremely high charge states. This implies that pure surface modification on the nano-scale could be carried out by slow highly charged ions. The mean size of nano-defect region could also be controlled by selecting the charge state and kinetic energy of HCI.