Excimer laser doping techniques for II-VI semiconductors
Excimer laser doping techniques for II-VI semiconductors
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II-VI 族半导体的准分子激光掺杂技术
DOI：
10.1016/s0169-4332(01)00117-9
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发表时间：
2001
影响因子：
6.7
通讯作者：
T. Aoki
中科院分区：
文献类型：
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作者：
Y. Hatanaka;M. Niraula;A. Nakamura;T. Aoki
准分子激光掺杂技术已用于在 II-IV 半导体中获得重杂质掺杂，这些半导体是相当难以实现双极导电性并在器件制造过程中获得良好欧姆接触的材料。使用 Na、K、Sb 或 P 等掺杂剂原子并通过准分子激光照射将它们扩散到晶体内部，对 CdTe、ZnSe 和 ZnO 进行了 p 型重掺杂检查。可以获得电阻率在10−2–10−3Ωcm范围内、空穴浓度在1017–1018cm−3范围内的重掺杂层。这些掺杂 p 型层中的载流子迁移率在 10–100cm2/V-s 范围内。还使用 In 作为掺杂剂研究了 CdTe 的 n 型掺杂。成功获得了电阻率、电子浓度和迁移率分别为5×10−3Ωcm、8.9×1018cm−3和140cm2/V-s的高导电n型层。最后，制造了 CdTe p-i-n 二极管，该二极管显示出用作核辐射探测器的良好潜力。
Excimer laser doping technique has been utilized to obtain a heavy impurity doping in II–IV semiconductors which are considerably difficult materials to achieve bipolar conductivity and to obtain good ohmic contact on them during device fabrication. p-type heavy dopings were examined on CdTe, ZnSe and ZnO using dopant atoms such as Na, K, Sb, or P and diffusing them inside the crystals by irradiating with an excimer laser. Heavily doped layers with the resistivity in the range from 10−2–10−3Ωcm and the hole concentration of 1017–1018cm−3could be obtained. The carrier mobility in those doped p-type layers was in the range from 10–100cm2/V-s. n-Type doping of CdTe was also investigated using In as a dopant. A highly conductive n-type layer with resistivity, electron concentration and mobility of 5×10−3Ωcm, 8.9×1018cm−3and 140cm2/V-s, respectively, was successfully obtained. Finally, a CdTe p–i–n diode was fabricated which showed a very good potentiality to be used as a nuclear radiation detector.