Bombardment with energetic hydrogen atoms during the sputter deposition of amorphous hydrogenated silicon
Bombardment with energetic hydrogen atoms during the sputter deposition of amorphous hydrogenated silicon
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非晶氢化硅溅射沉积过程中用高能氢原子轰击
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
R. Meaudre
中科院分区：
文献类型：
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作者：
J. Tardy;R. Meaudre
本文研究了直流阴极溅射法生长a-Si：H薄膜过程中的中性粒子轰击。被认为是不同的起源的高能粒子溅射或背散射在目标表面。的通量和每个物种的能量的评价。利用Westwood（1978）首先提出的参数进行了计算，确定了高能原子的热化长度和中性粒子撞击生长膜时的能量。已经表明，对于所使用的沉积条件（总压力20 mTorr，阳极到阴极距离5cm），氩气和硅总是被热化。相比之下，无论条件如何，氢原子都以非热能撞击生长膜。可以观察到能量高达1.6 keV的氢原子。提出了一个模型，在该模型中，这种轰击，与表面背溅射引起的Ar+离子加速的负子…
Abstract The bombardment by energetic neutral species during the growth of a-Si: H films by d.c. cathodic sputtering has been investigated. The different origins of energetic particles—sputtered or back-scattered at the target surface—are considered. An evaluation of the flux and of the energy of each species is given. A calculation which makes use of the arguments first proposed by Westwood (1978) has been carried out which allows one to determine the thermalization lengths of energetic atoms and the energy of neutrals as they impinge on the growing film. It has been shown that argon and silicon are always thermalized for the deposition conditions used (total pressure 20mTorr, anode-to-cathode distance 5cm). In contrast, hydrogen atoms impinge on the growing film with non-thermal energy whatever the conditions. Hydrogen atoms with energies up to 1·6 keV can be observed. A model is proposed in which this bombardment, associated with surface back-sputtering induced by Ar+ ions accelerated by a negative sub...