Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions
Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions
复制标题
DOI：
10.1103/physrevlett.96.027208
复制
发表时间：
2006-01-20
影响因子：
8.6
通讯作者：
Inomata, K
中科院分区：
文献类型：
--
作者：
Nozaki, T;Tezuka, N;Inomata, K
我们研究了以层状纳米Fe岛为中间层的全外延双MgO势垒磁性隧道结的自旋相关隧道电导特性。观察到隧道电导随着偏置电压的变化有明显的振荡。这种振荡依赖于中间层的厚度和磁化构型，可以用中间铁层中产生的自旋极化量子井态对隧道电导的调制来解释。首次观测到了全外延双势垒磁隧道结中的量子尺寸效应，表明在相干隧穿中发展与自旋相关的共振隧穿效应具有很大的潜力。
We investigated spin-dependent tunneling conductance properties in fully epitaxial double MgO barrier magnetic tunnel junctions with layered nanoscale Fe islands as a middle layer. Clear oscillations of the tunneling conductance were observed as a function of the bias voltage. The oscillation, which depends on the middle layer thickness and the magnetization configuration, is interpreted by the modulation of tunneling conductance due to the spin-polarized quantum well states created in the middle Fe layer. This first observation of the quantum size effect in the fully epitaxial double barrier magnetic tunnel junction indicates great potential for the development of the spin-dependent resonant tunneling effect in coherent tunneling regime.