Raman study on the interlayer interactions and the band structure of bilayer graphene synthesized by alcohol chemical vapor deposition
Raman study on the interlayer interactions and the band structure of bilayer graphene synthesized by alcohol chemical vapor deposition
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DOI：
10.1063/1.3651325
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发表时间：
2011-10
影响因子：
4
通讯作者：
M. Okano;Ryusuke Matsunaga;K. Matsuda;S. Masubuchi;T. Machida;Y. Kanemitsu
中科院分区：
文献类型：
--
作者：
M. Okano;Ryusuke Matsunaga;K. Matsuda;S. Masubuchi;T. Machida;Y. Kanemitsu
利用微探针拉曼光谱和紧密结合能带结构计算研究了醇化学气相沉积（a-CVD）合成石墨烯的电子能带结构和层间相互作用。石墨烯层数由G声子与二维声子峰的光谱积分强度比确定。我们发现，在a-CVD双层石墨烯中，决定层间相互作用的参数值不到剥离双层石墨烯的一半。在a-CVD双层石墨烯中，层间相互作用弱归因于非ab堆叠顺序。
We investigated the electronic band structure and interlayer interactions in graphene synthesized by alcohol-chemical vapor deposition (a-CVD) using microprobe Raman spectroscopy and tight-binding band-structure calculations. The number of graphene layers was determined from the spectrally integrated intensity ratios of the G phonon to 2D phonon peaks. We found that the value of the parameter determining interlayer interactions in a-CVD bilayer graphene was less than half that of exfoliated bilayer graphene. The weak interlayer interaction in a-CVD bilayer graphene was attributed to non-AB stacking order.