STT-MRAM cell reliability evaluation under process, voltage and temperature (PVT) variations
STT-MRAM cell reliability evaluation under process, voltage and temperature (PVT) variations
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工艺、电压和温度 (PVT) 变化下的 STT-MRAM 单元可靠性评估
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
J. Figueras
中科院分区：
文献类型：
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作者：
E. Vatajelu;R. Rodríguez;Marco Indaco;P. Prinetto;J. Figueras
随着工艺规模的扩大，基于CMOS的存储器面临着可靠性降低和漏电功率增加等重大问题。当技术扩展问题将超过好处时，将达到一个点。出于这个原因，文献中提出了替代方案，以可能取代基于电荷的存储器。其中最有前途的解决方案之一是自旋-转移-扭矩磁随机存取存储器(STT-MRAM)。要评估这种解决方案的可行性，必须了解它在各种可靠性降级因素的影响下的表现。在本文中，我们提出了一种方法，允许快速评估STT-MRAM单元在工艺、电压和温度变化下的可靠性。我们建议的方法允许进行灵敏度分析，这将显示设计者/测试工程师，这是某一设计的主要可靠性考虑因素。该方法具有通用性，可应用于任何存储器设计。
The CMOS based memories are facing major issues with technology scaling, such as decreased reliability and increased leakage power. A point will be reached when the technology scaling issues will overweight the benefits. For this reason, alternate solutions are being proposed in literature, to possibly replace charge based memories. One of the most promising of these solutions is the spin-transfer-torque magnetic random access memory (STT-MRAM). To evaluate the viability of such solution, one must understand how it behaves under the effect of the various reliability degradation factors. In this paper we propose a methodology which allows for fast reliability evaluation of an STT-MRAM cell under process, voltage, and temperature variations. Our proposed method allows for a sensitivity analysis which will show the designer/test engineer which is the main reliability concern of a certain design. The method is general, and it can be applied to any memory design.