Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD
Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD
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DOI：
10.1016/j.materresbull.2008.02.020
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发表时间：
2008-12
影响因子：
5.4
通讯作者：
Tianpeng Yang;Hongyang Zhu;J. Bian;Jie Sun;Xin Dong;Baolin Zhang;H. Liang;Xiang Li;Yongguo Cui;G. Du
中科院分区：
文献类型：
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作者：
Tianpeng Yang;Hongyang Zhu;J. Bian;Jie Sun;Xin Dong;Baolin Zhang;H. Liang;Xiang Li;Yongguo Cui;G. Du
采用金属有机化学气相沉积（MOCVD）技术在（0001）蓝宝石衬底上生长了n-ZnO/p-GaN异质结发光二极管。异质结结构由空穴浓度为1017 cm-3的Mg掺杂p型GaN层和电子浓度为1018 cm-3的非故意掺杂n型ZnO层组成。在室温下，在正向偏压条件下，观察到异质结结构的蓝紫光电致发光，发光峰位于λ 415 nm。通过与光致发光光谱的比较，讨论了电致发光（EL）的起源，认为是n-ZnO和p-GaN两侧的辐射复合所致。
The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of ∼1017cm−3and a unintentionally doped n-type ZnO layer with an electron concentration of ∼1018cm−3. A distinct blue-violet electroluminescence with a dominant emission peak centered at ∼415nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.