On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
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关于应变双栅 PMOSFET 确定性多子带器件模拟的数值方面
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
B. Meinerzhagen
中科院分区：
文献类型：
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作者：
A. Pham;C. Jungemann;B. Meinerzhagen
本文提出了包括磁输运在内的应变双栅PMOSFET确定性多子带器件模拟的数值方法。模拟基于多子带Boltzmann输运方程（BTE）、6×6 k π p薛定谔方程（SE）和泊松方程（PE）的自洽解。为了准确和有效地计算子带结构，采用了与单调三次样条插值相结合的2D k空间的有效离散化。多子带BTE是解决了一个确定性的方法的基础上的傅立叶展开的分布函数。发现纳米级双栅PMOSFET的傅里叶级数迅速收敛。提出了一种通过同时求解BTE-PE来提高Gummel型SE-PE-BTE环收敛性的方法。
In this paper numerical aspects of deterministic multisubband device simulations are presented for strained double gate PMOSFETs including magnetotransport. The simulations are based on a self-consistent solution of the multisubband Boltzmann transport equation (BTE), 6×6 k⋅p Schrödinger equation (SE) and Poisson equation (PE). For accurate and efficient calculation of the subband structure, an efficient discretization of the 2D k-space combined with a monotonic cubic spline interpolation is employed. The multisubband BTE is solved with a deterministic method based on a Fourier expansion of the distribution function. The Fourier series is found to converge rapidly for nanoscale double gate PMOSFETs. A convergence enhancement method for the Gummel type SE-PE-BTE loop by solving the BTE-PE simultaneously is proposed.