Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy

Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy
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DOI：
10.1143/jjap.42.371
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发表时间：
2003-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
通讯作者：
Oe, K
Oe, K
中科院分区：
其他
文献类型：
--
作者：
Yoshida, J;Kita, T;Oe, K

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我们进行了光反射 (PR) 光谱研究，以研究 GaAs1-xBix 合金的基本带隙。通过分析 PR 光谱中的 Franz-Keldysh 振荡来评估带隙能量的温度依赖性。随着Bi含量的增加，GaAs1-xBix合金的带隙能降低，表现出较大的光学弓形。随着Bi含量的增加，合金的带隙温度系数明显减小。当 x = 0.026 时，室温附近的温度系数为 -0.15 meV/K，是 GaAs 值的 1/3。
We performed photoreflectance (PR) spectroscopy in order to investigate the fundamental band gap of GaAs1-xBix alloys. The temperature dependence of the band gap energy was evaluated by analyzing of the Franz-Keldysh oscillation in the PR spectra. With increasing Bi content, the band gap energy of GaAs1-xBix alloy is reduced, which shows a large optical bowing. The temperature coefficient of the band,gap decreases appreciably in alloys with increasing Bi content. For x = 0.026, the temperature coefficient near room temperature is -0.15 meV/K which is 1/3 of the value for GaAs.