Investigation on influence of deposition rate of YBa2Cu3O7 − δ superconducting film prepared on Hastelloy C276 substrate by spray atomizing and coprecipitating laser chemical vapor deposition
Investigation on influence of deposition rate of YBa2Cu3O7 − δ superconducting film prepared on Hastelloy C276 substrate by spray atomizing and coprecipitating laser chemical vapor deposition
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DOI：
10.1016/j.tsf.2016.01.003
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发表时间：
2016-01
期刊：
影响因子：
2.1
通讯作者：
P. Zhao;Shi Su;Ying Wang;Chi Chen;Yangwu Mao;Z. Huang;Yunhui Niu;Y. Xu;T. Goto
中科院分区：
文献类型：
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作者：
P. Zhao;Shi Su;Ying Wang;Chi Chen;Yangwu Mao;Z. Huang;Yunhui Niu;Y. Xu;T. Goto
摘要：采用喷雾雾化和共沉淀激光化学气相沉积方法，在 CeO2/LaMnO3/MgO/Gd2Zr2O7/Hastelloy C276 基底上以 10 至 55μm h−1 的沉积速率制备 YBa2Cu3O7− δ (YBCO) 薄膜。以10 μm h−1的沉积速率制备了临界温度（TC）为91 K、临界电流密度（JC）为2.4 MA cm−2的c轴取向YBCO薄膜，薄膜呈现YBCO [001]//CeO2 [100]（YBCO [100]//CeO2 [011]）的外延生长模式。 YBCO薄膜的ω扫描和φ扫描的半峰全宽(FWHM)分别为1.9和3.2。在45 μm h− 1 的沉积速率下，获得了TC 为78 K、JC 为0.4 MAcm− 2 的a轴取向YBCO薄膜。 YBCO薄膜表现出YBCO[100]//CeO2[100](YBCO[001]//CeO2[011])的外延生长模式，并且ω扫描的半高宽为4.9，φ扫描的半高宽分别为9.5。
Abstract YBa2Cu3O7− δ (YBCO) films were prepared at deposition rates ranging from 10 to 55μm h− 1 on CeO2/LaMnO3/MgO/Gd2Zr2O7/Hastelloy C276 substrate by spray atomizing and coprecipitating laser chemical vapor deposition. At a deposition rate of 10 μm h− 1, a c-axis-oriented YBCO film with a high critical temperature (TC) of 91 K and critical current density (JC) of 2.4 MA cm− 2 was prepared, which showed an epitaxial growth mode of YBCO [001]//CeO2 [100](YBCO [100]//CeO2 [011]). The full width at half maximum (FWHM) of the ω-scan and that of the φ-scan of the YBCO film were 1.9 and 3.2, respectively. At a deposition rate of 45 μm h− 1, an a-axis-oriented YBCO film with a TC of 78 K and a JC of 0.4 MAcm− 2 was obtained. The YBCO film showed an epitaxial growth mode of YBCO [100]//CeO2 [100](YBCO [001]//CeO2 [011]) and had the FWHM of 4.9 for the ω-scan and that of 9.5 for the φ-scan, respectively.