Quantum efficiency and spectral response of compositionally graded HgCdTe P‐n heterojunction photodiodes
Quantum efficiency and spectral response of compositionally graded HgCdTe P‐n heterojunction photodiodes
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DOI：
10.1063/1.357333
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发表时间：
1994-10
影响因子：
3.2
通讯作者：
D. Rosenfeld;V. Garber;G. Bahir
中科院分区：
文献类型：
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作者：
D. Rosenfeld;V. Garber;G. Bahir
研究了碲镉汞异质结光电二极管的量子效率。研究中考虑的所有异质结都由宽带隙P型层和窄带隙n型层组成，并从背面照射。n型层是成分渐变的，因此包含内置电场。由于带隙的差异，光子仅在有源n型层中被吸收，并通过漂移和扩散机制被收集。首先在照明条件下在线性梯度n型区域中求解一维连续性方程，然后给出量子效率对所得内建电场的依赖关系。比较了两种不同的照明模式：在第一种模式中，与n-on-P HgCdTe二极管相关，光首先到达透明P层;在第二种模式中，与P-on-n二极管相关，光在穿过不透明的n型层后到达透明P层。
Results are presented of a study of the quantum efficiency of HgCdTe heterojunction photodiodes. All heterojunctions considered in the study consist of a wide‐band‐gap P‐type layer and a narrow‐band‐gap n‐type layer, and are illuminated from the backside. The n‐type layer is compositionally graded and therefore contains a built‐in electric field. Due to the difference in band gaps photons are absorbed in the active n‐type layer only and are collected by both drift and diffusion mechanisms. The one‐dimensional continuity equation is first solved in the linearly graded n‐type region under illumination conditions, and then the dependence of the quantum efficiency on the resulting built‐in electric field is presented. Two different modes of illumination are compared: In the first mode, associated with n‐on‐P HgCdTe diodes, the light reaches the transparent P layer first; in the second mode, associated with P‐on‐n diodes, the light reaches the transparent P side after it passes through the opaque n‐type layer....