Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications
Surface textured ZnO:Al thin films by pulsed DC magnetron sputtering for thin film solar cells applications
复制标题
DOI：
10.1016/j.apsusc.2010.08.001
复制
发表时间：
2010-11
影响因子：
6.7
通讯作者：
W. Yen;Yi-Cheng Lin;J. Ke
中科院分区：
文献类型：
--
作者：
W. Yen;Yi-Cheng Lin;J. Ke
采用脉冲直流磁控溅射法制备了透明导电薄膜ZnO：Al（Al掺杂ZnO，AZO）。在473 K、0.4Pa、150 W、占空比100μs、脉冲反转时间5μs、脉冲频率10 kHz、占空比95%的条件下，在钠钙玻璃基片上制备了厚度为800 nm的AZO薄膜。室温下测得薄膜电阻率为6.39×10−4Ωcm，平均可见光透过率Ttotal为81.9%，载流子浓度和迁移率分别为1.95× 1021 cm − 3和5.02cm2V− 1 s −1。在不同的水溶液中，0.5%HCl，5%草酸，33%KOH的膜进一步蚀刻，以符合光散射性能。在0.5%盐酸溶液中腐蚀30 s后，薄膜的总电阻率高达78.4%，雾度值HT为0.1，电阻率ρ为8.5×10−4Ωcm;在5%草酸溶液中腐蚀150 s后，薄膜的雾度值HT为0.2，电阻率ρ为7.9×10−4Ωcm。但是，可见光透射率Ttotal下降到72.1%。
Transparent conducting thin films of ZnO:Al (Al-doped ZnO, AZO) were prepared via pulsed DC magnetron sputtering with good transparency and relatively lower resistivity. The AZO films with 800nm in thickness were deposited on soda-lime glass substrates keeping at 473K under 0.4Pa working pressure, 150W power, 100μs duty time, 5μs pulse reverse time, 10kHz pulse frequency and 95% duty cycle. The as-deposited AZO thin films has resistivity of 6.39×10−4Ωcm measured at room temperature with average visible optical transmittance, Ttotalof 81.9% under which the carrier concentration and mobility were 1.95×1021cm−3and 5.02cm2V−1s−1, respectively. The films were further etched in different aqueous solutions, 0.5% HCl, 5% oxalic acid, 33% KOH, to conform light scattering properties. The resultant films etched in 0.5% HCl solution for 30s exhibited high Ttotal=78.4% with haze value, HT=0.1 and good electrical properties, ρ=8.5×10−4Ωcm while those etched in 5% oxalic acid for 150s had desirable HT=0.2 and relatively low electrical resistivity, ρ=7.9×10−4Ωcm. However, the visible transmittance, Ttotalwas declined to 72.1%.