Triplet Generation Dynamics in Si- and Ge-Bridged Conjugated Copolymers

Triplet Generation Dynamics in Si- and Ge-Bridged Conjugated Copolymers
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DOI:
10.1021/acs.jpcc.1c09253
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发表时间:
2022-01-05
影响因子:
3.7
通讯作者:
Dimitrov, Stoichko D.
Dimitrov, Stoichko D.
中科院分区:
化学3区
文献类型:
--
作者:
Hernandez, Federico J.;Fei, Zhuping;Dimitrov, Stoichko D.

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The effect of incorporating Si and Ge atoms in the conjugated backbone of semiconductor polymers is investigated using transient absorption spectroscopy and quantum chemical calculations to uncover the heavy-atom impact on the excited-state dynamics in neat films and polymer/fullerene blends. The singlet and triplet exciton dynamics of the copolymers are resolved and the time constant of intersystem crossing (ISC) of dithienosilole is found to be 6.98 +/- 0.45 ps and nearly 4 times longer than that of dithienogermole. This result indicates that factors other than the heavy-atom effect govern the ISC rates and the overall excited-state dynamics in the copolymers. Our quantum chemical calculations and estimates of the ISC rates based on the semiclassical derivation for the electron-transfer processes in the nonadiabatic limit reveal that the main driver for the increased ISC time constant in BuSiDT is the reduction in planarity and increased torsional out-of-plane vibration of the Si-bridged thiophenes in the dithienosilole compared to the dithienogermole, leading to 8.3 times higher spin-orbit coupling and consequently a higher ISC rate. In the polymer/fullerene blends, charge generation yields are estimated. The results from this study indicate that the incorporation of heavy atoms in a bridge position within the conjugated polymer backbone can be used as a synthetic strategy to fine-tune excited-state properties.